JPH0370124B2 - - Google Patents

Info

Publication number
JPH0370124B2
JPH0370124B2 JP61035291A JP3529186A JPH0370124B2 JP H0370124 B2 JPH0370124 B2 JP H0370124B2 JP 61035291 A JP61035291 A JP 61035291A JP 3529186 A JP3529186 A JP 3529186A JP H0370124 B2 JPH0370124 B2 JP H0370124B2
Authority
JP
Japan
Prior art keywords
fluidized bed
air
heat transfer
combustion
fuel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61035291A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62196522A (ja
Inventor
Osamu Matsuda
Tsutomu Higo
Takeshi Naito
Hajime Kawaguchi
Shigeru Kosugi
Naoki Inumaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP3529186A priority Critical patent/JPS62196522A/ja
Publication of JPS62196522A publication Critical patent/JPS62196522A/ja
Publication of JPH0370124B2 publication Critical patent/JPH0370124B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Fluidized-Bed Combustion And Resonant Combustion (AREA)
  • Heat-Exchange Devices With Radiators And Conduit Assemblies (AREA)
JP3529186A 1986-02-21 1986-02-21 流動床からの熱回収装置 Granted JPS62196522A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3529186A JPS62196522A (ja) 1986-02-21 1986-02-21 流動床からの熱回収装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3529186A JPS62196522A (ja) 1986-02-21 1986-02-21 流動床からの熱回収装置

Publications (2)

Publication Number Publication Date
JPS62196522A JPS62196522A (ja) 1987-08-29
JPH0370124B2 true JPH0370124B2 (en]) 1991-11-06

Family

ID=12437668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3529186A Granted JPS62196522A (ja) 1986-02-21 1986-02-21 流動床からの熱回収装置

Country Status (1)

Country Link
JP (1) JPS62196522A (en])

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2664942B2 (ja) * 1988-08-05 1997-10-22 三菱重工業株式会社 流動床ボイラ
JP6271365B2 (ja) * 2014-07-30 2018-01-31 株式会社Ｉｈｉ環境エンジニアリング 粉体燃焼用バーナ
JP6718296B2 (ja) * 2016-04-26 2020-07-08 三菱重工業株式会社 流動層燃焼炉

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1448196A (en) * 1972-10-20 1976-09-02 Sprocket Properties Ltd Fluidised bed incinerators
GB1577717A (en) * 1976-03-12 1980-10-29 Mitchell D A Thermal reactors incorporating fluidised beds
ES472676A1 (es) * 1977-08-19 1979-02-16 Flameless Furnaces Ltd Perfeccionamientos en dispositivos de combustion de lecho fluidizado
JPS57124608A (en) * 1981-01-27 1982-08-03 Ebara Corp Fluidized bed type heat-reactive furnace

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501344B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7501343B2 (en) 2000-06-27 2009-03-10 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7208413B2 (en) 2000-06-27 2007-04-24 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7465666B2 (en) 2000-06-28 2008-12-16 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7235486B2 (en) 2000-06-28 2007-06-26 Applied Materials, Inc. Method for forming tungsten materials during vapor deposition processes
US6855368B1 (en) 2000-06-28 2005-02-15 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7033922B2 (en) 2000-06-28 2006-04-25 Applied Materials. Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7115494B2 (en) 2000-06-28 2006-10-03 Applied Materials, Inc. Method and system for controlling the presence of fluorine in refractory metal layers
US7022948B2 (en) 2000-12-29 2006-04-04 Applied Materials, Inc. Chamber for uniform substrate heating
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US7094680B2 (en) 2001-02-02 2006-08-22 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US7201803B2 (en) 2001-03-07 2007-04-10 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7352048B2 (en) 2001-09-26 2008-04-01 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7494908B2 (en) 2001-09-26 2009-02-24 Applied Materials, Inc. Apparatus for integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7473638B2 (en) 2002-01-26 2009-01-06 Applied Materials, Inc. Plasma-enhanced cyclic layer deposition process for barrier layers
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7094685B2 (en) 2002-01-26 2006-08-22 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US7115499B2 (en) 2002-02-26 2006-10-03 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7429516B2 (en) 2002-02-26 2008-09-30 Applied Materials, Inc. Tungsten nitride atomic layer deposition processes
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7595263B2 (en) 2003-06-18 2009-09-29 Applied Materials, Inc. Atomic layer deposition of barrier materials

Also Published As

Publication number Publication date
JPS62196522A (ja) 1987-08-29

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